Effects of the Spacer Length on the High-Frequency Nanoscale Field Effect Diode performance

The performance of nanoscale Field Effect Diodes as a function of the spacer length between two gates is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for S-FED as the spacer length between two gates increases whereas this ratio is approximately constant for M-FED. The high-frequency performance of FEDs is investigated and the cut-off frequency of the intrinsic transistor without parasitic capacitance is calculated. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic applications.